Design and Mechanical Data

Base Material

GaInP₂/GaAs/Ge on Ge substrate

AR-coating

TiO_X/Al₂O₃

Dimensions/mm

(80.15±0.05) ×(40.15±0.05)

Cell Area/ cm²

30.15

Weight /mg per cm²

125±12

Thickness/mm

0.36±0.02

Coverglass

KFB 120

Coverglass Thickness/μm

120±20

Interconnectors(3× front side/1× diode)

Ag

Interconnector Thickness/μm

20

Typical Electrical Parameters (SCA)(AM0, 1sun, 1353W/m², 25℃)

Average Open CircuitV_oc (mV)

2740

Average Short Circuit J_sc (mA/cm²)

17.4

Voltage @ Max. PowerV_m (mV)

2430

Current @ Max. PowerJ_m (mA/cm²)

16.7

Average Efficiency η_bare(1353W/m²)

30%

Average Fill Factor

0.850

Radiation Degradation (AM0, 1sun, 1353W/m², 25℃)

Parameters

1×10¹⁴e/cm²

5×10¹⁴e/cm²

1×10¹⁵e/cm²

I_m/I_m0

0.99

0.97

0.94

V_m/V_m0

0.96

0.93

0.92

P_m/P_m0

0.95

0.90

0.86

Acceptance Values (SCA)

Voltage V_L/ mV

2350

Min. average current I_{L min} @ V_L/ mA

500

Min. individual current I_{L ave} @ V_L/ mA

480

Shadow Protection (Discrete bypass diode)

V_forward(620mA)/ V

≤1.0

I_reverse(4.0V)/ µA

≤50

Temperature Coefficients (20℃～65℃)

Parameters

BOL

1MeV, 5×10¹⁴e/cm²

1MeV, 1×10¹⁵e/cm²

J_sc (μA/cm²/℃)

11.0

10.0

13.0

V_oc (mV/℃)

-5.9

-6.1

-6.3

J_m (μA/cm²/℃)

9.0

9.5

15.0

V_m (mV/℃)

-6.0

-6.2

-6.5

Threshold Values

Absorptivity

≤ 0.92

Pull Test(at 45°)

≥0.83N/mm²