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30% efficiency Triple-junction GaAs Solar Cell

Product description

30% Triple-junction GaAs Solar Cell

Features:

Ø High efficiency;

Ø High reliability;

Ø High temperature resistance;

 

Ø Strong anti-radiation capacity.

 

Applications: LEO, MEO, GEO. 

 

Flight heritage: Satellites of Shijian series, satellites of Yaogan series. 

 

Product parameters

Design and Mechanical Data

Base Material

GaInP2/GaAs/Ge on Ge substrate

AR-coating

TiOX/Al2O3

Dimensions/mm

(80.15±0.05) ×(40.15±0.05)

Cell Area/ cm2

30.15

Weight /mg per cm2

125±12

Thickness/mm

0.36±0.02

Coverglass

KFB 120

Coverglass Thickness/μm

120±20

Interconnectors(3× front side/1× diode)

Ag

Interconnector Thickness/μm

20

Typical Electrical Parameters (SCA)(AM0, 1sun, 1353W/m2, 25)

Average Open CircuitVoc (mV)

2740

Average Short Circuit Jsc (mA/cm2)

17.4

Voltage @ Max. PowerVm (mV)

2430

Current @ Max. PowerJm (mA/cm2)

16.7

Average Efficiency ηbare(1353W/m2)

30%

Average Fill Factor

0.850

Radiation Degradation (AM0, 1sun, 1353W/m2, 25)

Parameters

1×1014e/cm2

5×1014e/cm2

1×1015e/cm2

Im/Im0

0.99

0.97

0.94

Vm/Vm0

0.96

0.93

0.92

Pm/Pm0

0.95

0.90

0.86

Acceptance Values (SCA)

Voltage VL/ mV

2350

Min. average current IL min @ VL/ mA

500

Min. individual current IL ave @ VL/ mA

480

Shadow Protection (Discrete bypass diode)

Vforward(620mA)/ V

≤1.0

Ireverse(4.0V)/ µA

≤50

Temperature Coefficients (2065)

Parameters

BOL

1MeV, 5×1014e/cm2

1MeV, 1×1015e/cm2

Jsc (μA/cm2/)

11.0

10.0

13.0

Voc (mV/)

-5.9

-6.1

-6.3

Jm (μA/cm2/)

9.0

9.5

15.0

Vm (mV/)

-6.0

-6.2

-6.5

Threshold Values

Absorptivity

≤ 0.92

Pull Test(at 45°)

≥0.83N/mm2

 

(Size of the cell could be customized)

Corresponding parameter set not found, please add it in property template of background
暂未实现,敬请期待
暂未实现,敬请期待
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30% efficiency Triple-junction GaAs Solar Cell