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30% efficiency Triple-junction GaAs Solar Cell
30% Triple-junction GaAs Solar Cell
Features:
Ø High efficiency;
Ø High reliability;
Ø High temperature resistance;
Ø Strong anti-radiation capacity.
Applications: LEO, MEO, GEO.
Flight heritage: Satellites of Shijian series, satellites of Yaogan series.
Product parameters
Design and Mechanical Data |
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Base Material |
GaInP2/GaAs/Ge on Ge substrate |
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AR-coating |
TiOX/Al2O3 |
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Dimensions/mm |
(80.15±0.05) ×(40.15±0.05) |
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Cell Area/ cm2 |
30.15 |
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Weight /mg per cm2 |
125±12 |
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Thickness/mm |
0.36±0.02 |
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Coverglass |
KFB 120 |
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Coverglass Thickness/μm |
120±20 |
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Interconnectors(3× front side/1× diode) |
Ag |
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Interconnector Thickness/μm |
20 |
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Typical Electrical Parameters (SCA)(AM0, 1sun, 1353W/m2, 25℃) |
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Average Open CircuitVoc (mV) |
2740 |
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Average Short Circuit Jsc (mA/cm2) |
17.4 |
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Voltage @ Max. PowerVm (mV) |
2430 |
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Current @ Max. PowerJm (mA/cm2) |
16.7 |
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Average Efficiency ηbare(1353W/m2) |
30% |
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Average Fill Factor |
0.850 |
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Radiation Degradation (AM0, 1sun, 1353W/m2, 25℃) |
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Parameters |
1×1014e/cm2 |
5×1014e/cm2 |
1×1015e/cm2 |
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Im/Im0 |
0.99 |
0.97 |
0.94 |
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Vm/Vm0 |
0.96 |
0.93 |
0.92 |
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Pm/Pm0 |
0.95 |
0.90 |
0.86 |
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Acceptance Values (SCA) |
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Voltage VL/ mV |
2350 |
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Min. average current IL min @ VL/ mA |
500 |
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Min. individual current IL ave @ VL/ mA |
480 |
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Shadow Protection (Discrete bypass diode) |
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Vforward(620mA)/ V |
≤1.0 |
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Ireverse(4.0V)/ µA |
≤50 |
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Temperature Coefficients (20℃~65℃) |
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Parameters |
BOL |
1MeV, 5×1014e/cm2 |
1MeV, 1×1015e/cm2 |
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Jsc (μA/cm2/℃) |
11.0 |
10.0 |
13.0 |
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Voc (mV/℃) |
-5.9 |
-6.1 |
-6.3 |
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Jm (μA/cm2/℃) |
9.0 |
9.5 |
15.0 |
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Vm (mV/℃) |
-6.0 |
-6.2 |
-6.5 |
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Threshold Values |
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Absorptivity |
≤ 0.92 |
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Pull Test(at 45°) |
≥0.83N/mm2 |
(Size of the cell could be customized)